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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1033 DESCRIPTION With TO-220 package Complement to type 2SD1437 APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature SEM GE Open base Open collector TC=25ae OND IC TOR UC VALUE -60 -60 -5 -3 40 150 -55~150 UNIT V V V A W ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Base-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-25mA ,IB=0 IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-0.5A ; VCE=-5V 60 MIN -60 -60 -5 TYP. 2SB1033 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob MAX UNIT V V V -1.5 -1.5 -10 -10 |I |I V V A A IN E Transition frequency Output capacitance hFE Classifications D 60-120 ANG CH F 160-320 EMIC ES IE=0 ; VCB=-10V ;f=1MHz OND TOR UC 320 12 100 MHz pF 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1033 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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